Doping Concentration vs Position along the grown CZ Crystal for Common Dopants in Silicon
Hint: drag mouse to change fraction
| Equilibrium segregation
coefficients during CZ crystal growth for Si
(Source: J. Plummer, M. Deal, P. Griffin, Silicon VLSI Technology) |
|
| Impurity | Segregation Coefficient(Ko) |
| As | 0.3 |
| Bi | 7E-4 |
| C | 0.07 |
| Li | 0.01 |
| O | 0.5 |
| P | 0.35 |
| Sb | 0.023 |
| Al | 2.8E-3 |
| Ga | 8E-3 |
| B | 0.8 |
| Au | 2.5E-5 |
For most impurites in silicon CZ growth, Ko < 1, which means that these impurities prefer to be in the liquid phase. The table above gives some equilibrium segregation coefficients. In the applet, you can select an impurity and drag mouse to see the value of Cs/Co.
By Zhongsheng Guo
EE7240 Integrated Circuit Engineering, Fall '2000
Louisiana State University